Kioxia Advances Mobile Storage with New UFS Ver. 4.1 Embedded Flash Memory Devices
Kioxia Corporation, a global leader in memory solutions, has announced the sampling of its latest Universal Flash Storage (UFS) Ver. 4.1 embedded memory devices, further solidifying its position at the forefront of high-performance storage technology. Designed to address the growing demands of next-generation mobile applications—such as advanced smartphones equipped with on-device AI—these new devices deliver enhanced speed, superior power efficiency, and compact form factors, all while leveraging Kioxia’s cutting-edge 8th generation BiCS FLASH™ 3D flash memory.
The introduction of these UFS Ver. 4.1 devices represents a significant leap forward in mobile storage capabilities. By integrating innovative technologies like CBA (CMOS directly Bonded to Array), Kioxia is redefining the boundaries of flash memory design, offering users faster performance, lower power consumption, and greater storage density in a small BGA package. These advancements are poised to elevate user experiences by enabling smoother app performance, faster downloads, and uninterrupted functionality during critical tasks.
A New Era of Flash Memory Design: CBA Technology
At the heart of Kioxia’s UFS Ver. 4.1 devices lies the company’s groundbreaking 8th generation BiCS FLASH™ 3D flash memory, which introduces CBA technology—a revolutionary architectural innovation. CBA involves directly bonding the CMOS circuitry to the memory array, eliminating traditional interconnects and reducing signal loss. This design breakthrough results in significant improvements in power efficiency, performance, and storage density, making it ideal for the demanding requirements of modern mobile devices.
By adopting CBA technology, Kioxia’s new UFS devices achieve remarkable gains in both speed and power efficiency. These enhancements not only meet the needs of today’s mobile applications but also pave the way for future innovations, such as on-device AI processing and augmented reality experiences.
Key Features of Kioxia’s UFS Ver. 4.1 Devices
Kioxia’s latest UFS Ver. 4.1 embedded memory devices come packed with features designed to deliver exceptional performance and efficiency. Below are some of the standout attributes:
- Wide Range of Capacities:
The devices are available in capacities of 256 gigabytes (GB), 512 GB, and 1 terabyte (TB), catering to a variety of use cases, from everyday smartphone users to power users requiring extensive storage for media, apps, and data-intensive tasks. - Enhanced Performance:
Compared to the previous generation, Kioxia’s UFS Ver. 4.1 devices offer notable improvements in random read and write speeds:
- Random Writes: Up to +30% improvement for 512 GB and 1 TB models.
- Random Reads: Up to +45% improvement for 512 GB models and +35% improvement for 1 TB models.
These performance gains ensure faster app launches, quicker file transfers, and seamless multitasking.
- Improved Power Efficiency:
Power consumption has been significantly reduced, extending battery life for mobile devices:
- Read Operations: Up to +15% improvement in power efficiency for 512 GB and 1 TB models.
- Write Operations: Up to +20% improvement in power efficiency for 512 GB and 1 TB models.
These enhancements make the devices ideal for energy-conscious applications and prolonged device usage.
- Advanced Performance Optimization:
- Host Initiated Defragmentation: This feature enables delayed garbage collection, ensuring consistent high-speed performance during critical operations.
- WriteBooster Buffer Resizing: Offers greater flexibility to optimize performance based on specific use cases, enhancing responsiveness and reliability.
- Compact Form Factor:
The 1 TB model features a reduced package height compared to its predecessor, allowing for sleeker and more space-efficient device designs—a crucial advantage in the competitive mobile market. - Support for UFS Ver. 4.1 Standard:
Compliance with the latest UFS standard ensures compatibility with cutting-edge mobile platforms and future-proofing for upcoming innovations.
Meeting the Demands of Next-Generation Applications
As mobile devices continue to evolve, they are expected to handle increasingly complex tasks, including on-device AI, high-resolution video recording, and real-time gaming. Kioxia’s UFS Ver. 4.1 devices are engineered to meet these demands head-on, providing the speed, efficiency, and reliability required for such applications.
For example, the improved random read and write speeds enable faster access to large datasets, a critical requirement for AI-driven applications that rely on rapid data processing. Similarly, the enhanced power efficiency ensures that devices can perform intensive tasks without draining the battery quickly, offering users a seamless and uninterrupted experience.
Moreover, the compact form factor and reduced package height make these devices an excellent choice for manufacturers aiming to design sleek, lightweight smartphones and tablets without compromising on storage capacity or performance.
Reinforcing Kioxia’s Leadership in Memory Solutions
Kioxia’s introduction of UFS Ver. 4.1 devices underscores its commitment to pushing the boundaries of memory technology. By leveraging innovations like CBA technology and the 8th generation BiCS FLASH™ 3D flash memory, the company continues to set new standards for performance, efficiency, and scalability in the mobile storage market.
These advancements not only benefit end-users but also empower device manufacturers to create cutting-edge products that meet the ever-growing expectations of consumers. Whether it’s enabling faster app performance, supporting high-resolution multimedia content, or facilitating on-device AI capabilities, Kioxia’s UFS Ver. 4.1 devices are designed to be the backbone of next-generation mobile devices.
About Kioxia
Kioxia is a world leader in memory solutions, dedicated to the development, production and sale of flash memory and solid-state drives (SSDs). In April 2017, its predecessor Toshiba Memory was spun off from Toshiba Corporation, the company that invented NAND flash memory in 1987. Kioxia is committed to uplifting the world with “memory” by offering products, services and systems that create choice for customers and memory-based value for society. Kioxia’s innovative 3D flash memory technology, BiCS FLASH™, is shaping the future of storage in high-density applications, including advanced smartphones, PCs, SSDs, automotive systems, data centers and generative AI systems.
