Lam Research Introduces ALTUS® Halo: Revolutionizing Semiconductor Metallization with Molybdenum ALD
In a groundbreaking advancement for the semiconductor industry, Lam Research Corp. (Nasdaq: LRCX) has unveiled ALTUS® Halo, the world’s first atomic layer deposition (ALD) tool designed to harness the capabilities of molybdenum in the production of cutting-edge semiconductors. This revolutionary technology delivers exceptional feature fill and high-precision deposition of low-resistivity, void-free molybdenum metallization, addressing the scaling challenges faced by advanced memory and logic devices. Currently in qualification and ramping with all leading chipmakers, ALTUS Halo marks a pivotal moment in semiconductor manufacturing, enabling the next wave of innovation for AI, cloud computing, and next-generation smart devices.
A New Era of Semiconductor Metallization
ALTUS Halo is the latest addition to Lam’s distinguished ALTUS product family, joining Akara®, the most advanced conductor etch tool announced earlier today. Together, these innovations form a differentiated portfolio that empowers chipmakers to overcome some of the industry’s toughest scaling challenges. As the demands of next-generation applications continue to grow, so does the need for advanced semiconductors and new manufacturing processes to create them.
For over two decades, tungsten-based ALD—first pioneered by Lam—has been the predominant metallization technique for depositing and filling contacts and lines in semiconductor devices. However, as NAND, DRAM, and logic devices scale to more complex architectures, including 3D integration, the limitations of tungsten integration have become apparent. Enter ALTUS Halo, which positions Lam Research at the forefront of the industry’s transition from tungsten to molybdenum.
“Building on Lam’s deep metallization expertise, ALTUS Halo is the most significant breakthrough in atomic layer deposition in over 20 years,” said Sesha Varadarajan, Senior Vice President and General Manager of the Global Products Group at Lam Research. “It brings together Lam’s quad station module architecture and new advancements in ALD technology to provide engineered, low-resistivity molybdenum deposition for high-volume manufacturing—a critical requirement for emerging and future chip inflections, including 1,000-layer 3D NAND, 4F2 DRAM, and advanced gate-all-around logic.”
Why Molybdenum is a Game-Changer for Semiconductor Devices
Semiconductor devices rely on fast electrical signals traveling through nanoscale connections, such as 3D NAND wordlines, to send commands. Traditionally, these features are filled with tungsten after being etched, creating essential connections. However, tungsten’s higher resistivity and the need for additional barrier layers can lead to slower signal speeds and potential bottlenecks, especially as devices scale to more complex architectures.
Molybdenum offers a transformative solution. With lower resistivity in nano-scale wires compared to tungsten, molybdenum eliminates the need for adhesion or barrier layers, reducing process steps, boosting efficiency, and improving chip speed. Leveraging decades of metallization expertise and breakthroughs in deposition technology, Lam Research has made molybdenum ALD viable for mass production for the first time. In most cases, ALTUS Halo delivers better than 50% improvement in resistance over conventional tungsten metallization.
Advanced Features of ALTUS Halo
ALTUS Halo is optimized for a wide range of metallization needs, offering unparalleled precision and flexibility:
- Conformal and Selective Deposition: The tool supports conformal deposition for uniform coverage and selective deposition with bottom-up feature fill.
- Chemistry and Thermal Flexibility: ALTUS Halo adapts to various metallization requirements, ensuring compatibility with diverse materials and processes.
- Plasma for Temperature-Sensitive Applications: Plasma-enhanced capabilities enable deposition on temperature-sensitive substrates, expanding its applicability across device types.
These features make ALTUS Halo the most advanced molybdenum deposition tool in the semiconductor industry, capable of meeting the rigorous demands of high-volume manufacturing.
Early Adoption and Industry Validation
ALTUS Halo is already gaining traction among leading semiconductor manufacturers. Early adoption has begun at high-volume 3D NAND fabs in Korea and Singapore, as well as advanced logic fabs, with ongoing development efforts underway with DRAM customers.
“The integration of molybdenum metallization enables Micron to be first to market with industry-leading I/O bandwidth and storage capacity in the latest generation of NAND products,” said Mark Kiehlbauch, Corporate Vice President of NAND Development at Micron. “Lam’s ALTUS Halo tool has made it possible for Micron to bring molybdenum into mass production.”
This validation from industry leaders underscores ALTUS Halo’s critical role in enabling next-generation semiconductor architectures. Its ability to deliver low-resistivity metallization with fewer process steps ensures faster, more efficient chip production while maintaining high performance and reliability.
Enabling Future Innovations
As the semiconductor industry continues to push the boundaries of innovation, tools like ALTUS Halo are essential for overcoming scaling challenges. By transitioning from tungsten to molybdenum, chipmakers can achieve the low-resistance metallization required for 1,000-layer 3D NAND, 4F2 DRAM, and gate-all-around logic devices. These advancements will pave the way for faster, more powerful chips that power AI, cloud computing, autonomous vehicles, and other transformative technologies.
ALTUS Halo’s introduction also highlights Lam Research’s commitment to driving the industry forward. By continuously innovating and delivering practical solutions for high-volume manufacturing, Lam ensures that chipmakers are equipped to meet the growing global demand for advanced semiconductors.
