Renesas Advances Power Efficiency with Next-Gen GaN FETs for AI, Industrial, and Charging Applications
Renesas Electronics Corporation (TSE:6723), a leading provider of advanced semiconductor solutions, has unveiled three new high-voltage 650V Gallium Nitride (GaN) Field-Effect Transistors (FETs) designed to meet the demands of modern power systems. These cutting-edge devices target multi-kilowatt applications, including AI data centers, server power supplies (including 800V HVDC architectures), E-mobility charging stations, uninterruptible power supply (UPS) systems, battery energy storage, and solar inverters. Built on the proven SuperGaN® technology platform, these 4th-generation plus (Gen IV Plus) devices deliver exceptional thermal efficiency, ultra-low power loss, and robust performance, making them ideal for high-density power conversion.
Superior Efficiency with Proven SuperGaN Technology
The new Gen IV Plus devices—TP65H030G4PRS, TP65H030G4PWS, and TP65H030G4PQS—are engineered using Renesas’ field-proven depletion-mode (d-mode) normally-off architecture, originally pioneered by Transphorm, which Renesas acquired in June 2024. This d-mode technology offers significant advantages over silicon, silicon carbide (SiC), and other GaN offerings. The devices achieve superior efficiency by minimizing power loss through reduced gate charge, output capacitance, crossover loss, and dynamic resistance impact. Additionally, they feature a higher 4V threshold voltage, a capability not achievable with today’s enhancement-mode (e-mode) GaN devices.
Compared to the previous Gen IV platform, the Gen IV Plus products utilize a die that is 14% smaller, achieving a lower RDS(on) of 30 milliohms (mΩ). This reduction in on-resistance translates to a 14% improvement in conduction losses and a 20% enhancement in the on-resistance output-capacitance-product figure of merit (FOM). The smaller die size not only reduces system costs but also lowers output capacitance, resulting in higher efficiency and power density. These advancements make the Gen IV Plus devices particularly well-suited for cost-sensitive, thermally demanding applications where high performance, efficiency, and compact design are critical.
Flexible Packaging Options for Diverse Applications
To cater to a wide range of power system requirements, the new GaN FETs are available in TOLT, TO-247, and TOLL package options. These packaging choices provide engineers with the flexibility to optimize thermal management and board design for specific power architectures. The compact surface-mount packages, including bottom-side (TOLL) and top-side (TOLT) thermal conduction paths, enable cooler case temperatures and simplify device paralleling when higher conduction currents are needed. Meanwhile, the widely used TO-247 package offers enhanced thermal capability for higher power applications.
“The rollout of Gen IV Plus GaN devices marks the first major milestone since Renesas’ acquisition of Transphorm last year,” said Primit Parikh, Vice President of the GaN Business Division at Renesas. “Future iterations will integrate SuperGaN technology with our drivers and controllers to deliver complete power solutions. Whether used as standalone FETs or integrated into system designs with Renesas controllers, these devices pave the way for higher power density, reduced footprints, and better efficiency at a lower total system cost.”
Simplified Integration with Unique d-mode Design
One of the standout features of the new Renesas GaN FETs is their unique d-mode normally-off design. This configuration integrates a low-voltage silicon MOSFET, enabling seamless normally-off operation while fully leveraging the low-loss, high-efficiency switching benefits of GaN. Unlike e-mode GaN devices, which require specialized drivers, the SuperGaN FETs can be driven using standard off-the-shelf gate drivers. This compatibility simplifies design and lowers the barrier to GaN adoption for system developers.
The ease of integration, combined with the robust performance of the d-mode architecture, ensures reliability and operational simplicity. These attributes make the Gen IV Plus devices an attractive choice for engineers seeking to upgrade existing designs without significant rework, preserving existing engineering investments while achieving significant performance improvements.
Driving the Future of Power Semiconductors
GaN-based switching devices are rapidly emerging as key enablers of next-generation power semiconductors, driven by demand from electric vehicles (EVs), renewable energy systems, industrial power conversion, and AI-driven data centers. Compared to traditional silicon and silicon carbide (SiC) devices, GaN FETs offer superior efficiency, higher switching frequencies, and smaller form factors, addressing the growing need for compact, energy-efficient solutions.
Renesas stands out in the GaN market with its comprehensive portfolio, offering both high- and low-power GaN FETs. While many competitors focus primarily on lower-power applications, Renesas’ diverse product lineup allows it to serve a broader range of industries and customer needs. To date, the company has shipped over 20 million GaN devices for high- and low-power applications, representing more than 300 billion hours of field usage—a testament to the reliability and scalability of its solutions.
A Clear Path to Higher Performance and Efficiency
The introduction of the Gen IV Plus GaN FETs underscores Renesas’ commitment to advancing power electronics. By combining the field-proven SuperGaN platform with innovative design features, these devices deliver unmatched performance and efficiency. They empower engineers to design systems with higher power density, reduced footprints, and improved energy efficiency—all while lowering total system costs.
As industries continue to push the boundaries of power conversion, Renesas’ Gen IV Plus GaN FETs represent a significant step forward. Whether powering AI data centers, supporting renewable energy initiatives, or enhancing EV charging infrastructure, these devices provide a clear path to achieving the next generation of power solutions. With Renesas’ leadership in GaN technology, the future of energy-efficient power systems looks brighter than ever.
About Renesas Electronics Corporation
Renesas Electronics Corporation (TSE: 6723) empowers a safer, smarter and more sustainable future where technology helps make our lives easier. A leading global provider of microcontrollers, Renesas combines our expertise in embedded processing, analog, power and connectivity to deliver complete semiconductor solutions. These Winning Combinations accelerate time to market for automotive, industrial, infrastructure and IoT applications, enabling billions of connected, intelligent devices that enhance the way people work and live. Learn more at renesas.com. Follow us on LinkedIn, Facebook, X, YouTube, and Instagram.
